Atomic Layer Deposition of AlN on Graphene

Graphene is a material with great promise for several applications within electronics. However, using graphene in any such application requires its integration stack of thin layers materials. The ideal structure has fully saturated surface without binding sites chemisorption growth species, making film on highly challenging. Herein, an attempt to deposit very AlN atomic layer deposition approach reported. It demonstrated X-ray photoelectron spectroscopy that Al–N are formed the films deposited and shown by scanning electron microscopy force have island morphology. These results may be considered promising toward development protocol possibly also 2D fabrication.